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MBT5401 0E156M43 T373A UF924DSB AW08G M74ALS1 HM100 A2210
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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA1943
DESCRIPTION With TO-3PL package Complement to type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector MAX -230 -230 -5 -15 -1.5 150 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
2SA1943
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
-230
V
VCEsat
Collector-emitter saturation voltage
IC=-8A IB=-0.8A
-3.0
V
VBE
Base-emitter voltage
IC=-7A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-230V; IE=0
-5
|I
A
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5
|I
A
hFE-1
DC current gain
IC=-1A ; VCE=-5V
55
160
hFE-2
DC current gain
IC=-7A ; VCE=-5V
35
fT
Transition frequency
IC=-1A ; VCE=-5V
30
MHz
COB
Collector output capacitance
f=1MHz;VCB=-10V
360
pF
hFE-1 classifications R 55-110 O 80-160
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1943
Fig.2 Outline dimensions (unindicated tolerance:A
0.50 mm)
3
JMnic
Product Specification
Silicon Power Transistors
2SA1943
4


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